Analysis of the etch pit shape on SiC wafers
Introducing a case where etch pits formed on SiC wafers were observed using a 3D X-ray microscope (X-ray CT)!
In order to promote the spread of power semiconductors, the development of low-defect SiC wafers is underway. X-ray CT is a method that visualizes the shape of materials in three dimensions non-destructively and allows for quantitative evaluation. In the PDF document, you can see the CT images obtained when observing the etched pits formed on SiC wafers using a 3D X-ray microscope (X-ray CT). [Overview] ■ Shape analysis of etched pits using X-ray CT *For more details, please refer to the PDF document or feel free to contact us.
- Company：東芝ナノアナリシス
- Price：Other
